Shenzhen Weitaixu Capacitor Co.,Ltd
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IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube
Basic Parameters :
Absolute Maximum Ratings :
Description :
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Technical Specifications :
| Tab | Tab |
| Package Width | 4.83(Max) |
| Package Height | 9.02(Max) |
| Package Length | 10.67(Max) |
| PCB changed | 3 |
| Lead Shape | Through Hole |
| Mounting | Through Hole |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Process Technology | HEXFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 55 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 110 |
| Maximum Drain Source Resistance (mOhm) | 8@10V |
| Typical Gate Charge @ Vgs (nC) | 146(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 146(Max) |
| Typical Input Capacitance @ Vds (pF) | 3247@25V |
| Maximum Power Dissipation (mW) | 200000 |
| Typical Fall Time (ns) | 65 |
| Typical Rise Time (ns) | 101 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Typical Turn-On Delay Time (ns) | 14 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tube |
| Automotive | No |
| Supplier Package | TO-220AB |
| Standard Package Name | TO-220 |
| Pin Count | 3 |
| Military | No |
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