STGWA60H65DFB Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
General Description :
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE (sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Distinctive Characteristics :
Part No: STGWA60H65DFB
Description: Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
Collector Current (DC): 80(A)
Collector-Emitter Voltage: 650(V)
Operating Temperature Classification: Military
Operating Temperature (Max): 175C
Gate to Emitter Voltage (Max): '±20(V)
Operating Temperature (Min): -55C
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