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STP100N8F6 Audio Power Mosfet N Channel 80 V 0.008 Ohm Type 100 A StripFET F6

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Shenzhen Weitaixu Capacitor Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissShea Wang
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STP100N8F6 Audio Power Mosfet N Channel 80 V 0.008 Ohm Type 100 A StripFET F6

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Brand Name :STMicroelectronics
Model Number :STP100N8F6
Certification :Original Part
Place of Origin :Shenzhen, China
MOQ :1PCS
Price :Negotiation
Payment Terms :T/T, Western Union, Paypal, Wechat Pay
Supply Ability :1 Million pieces per Month
Delivery Time :Immediate
Packaging Details :TO-220
Packaging :TO-220
Product Type :MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package
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STP100N8F6 MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package


General Description :

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.


Distinctive Characteristics :

Part No: STP100N8F6

Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube

Product Category Power MOSFET
Process Technology STripFET F6
Configuration Single
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 80
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4
Maximum Continuous Drain Current (A) 100
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 9@10V
Typical Gate Charge @ Vgs (nC) 100@10V
Typical Gate Charge @ 10V (nC) 100
Typical Input Capacitance @ Vds (pF) 5955@25V
Maximum Power Dissipation (mW) 176000
Typical Fall Time (ns) 21
Typical Rise Time (ns) 46
Typical Turn-Off Delay Time (ns) 103
Typical Turn-On Delay Time (ns) 33
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Packaging Tube
Automotive No
Pin Count 3
Supplier Package TO-220AB
Standard Package Name TO-220



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