Shenzhen Weitaixu Capacitor Co.,Ltd
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Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor
Feature
• Enhancement mode transistor – Normally OFF switch
• Ultra fast switching
• No reverse-recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Superior commutation ruggedness
• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)
Benefits
• Improves system efficiency
• Improves power density
• Enables higher operating frequency
• System cost reduction savings
• Reduces EMI
| Categories | Mosfet Power Transistor |
|---|---|
| IGT60R070D1ATMA1 | |
| Transistor Polarity | N-Channel |
| Channel No. | 1 Channel |
| Leakage Source on-resistance | 70 mOhms |
| Configure | Single |
| Pd-Power Dissipation | 125 W |
| Vgs th-Gate Source threshold Voltage | 0.9 V |
| Channel Pattern | Enhancement |
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